X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system

Colombi, Paolo; Bontempi, Elza; Depero, Laura E; Azuma, Yasushi; Fujimoto, Toshiyuki

doi:10.1063/1.3054336

Title: X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system

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Abstract

Modifications of GaAs/air interface under x-ray exposure have been investigated by means of x-ray reflectometry (XRR). For this purpose a GaAs/AlAs multilayer system was continuously monitored for 90 h while acquiring XRR profiles. Three different starting models for the oxide/contaminants layer were tested for the analysis of XRR data and discussed. The main effect of x-ray exposure, revealed by the three different approaches, is an increase in the thickness of the gallium and arsenic oxides until a saturation value (about 3.0 nm) is reached after about 50 h. Total reflection x-ray fluorescence analysis performed on a couple of twin samples, either irradiated and nonirradiated, confirms that the oxidation process is promoted by x-ray exposure and indicates the presence of a richer As oxide phase at the surface of the x-ray irradiated samples.

Authors:

Colombi, Paolo; Bontempi, Elza; Depero, Laura E ^[1]; Azuma, Yasushi; Fujimoto, Toshiyuki ^[2]

Chemistry for Technologies Laboratory, INSTM, University of Brescia, Brescia 15-25121 (Italy)
Surface and Thin Film Standards Section, National Metrology Institute of Japan, AIST, Tsukuba, Ibaraki 305-8563 (Japan)

Publication Date:: Thu Jan 01 00:00:00 EST 2009

OSTI Identifier:: 21185962

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 105; Journal Issue: 1; Other Information: DOI: 10.1063/1.3054336; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; AIR; ALUMINIUM ARSENIDES; ARSENIC OXIDES; FLUORESCENCE; GALLIUM; GALLIUM ARSENIDES; LAYERS; OXIDATION; REFLECTION; REFLECTIVITY; SEMICONDUCTOR MATERIALS; X RADIATION; X-RAY FLUORESCENCE ANALYSIS

Citation Formats


                    Colombi, Paolo, Bontempi, Elza, Depero, Laura E, Azuma, Yasushi, and Fujimoto, Toshiyuki. X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system.  United States: N. p., 2009. 
        Web.  doi:10.1063/1.3054336.

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                    Colombi, Paolo, Bontempi, Elza, Depero, Laura E, Azuma, Yasushi, & Fujimoto, Toshiyuki. X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system.  United States.  https://doi.org/10.1063/1.3054336

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                    Colombi, Paolo, Bontempi, Elza, Depero, Laura E, Azuma, Yasushi, and Fujimoto, Toshiyuki. 2009.  
        "X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system".  United States.  https://doi.org/10.1063/1.3054336.

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@article{osti_21185962,

  title        = {X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system},

  author       = {Colombi, Paolo and Bontempi, Elza and Depero, Laura E and Azuma, Yasushi and Fujimoto, Toshiyuki},

  abstractNote = {Modifications of GaAs/air interface under x-ray exposure have been investigated by means of x-ray reflectometry (XRR). For this purpose a GaAs/AlAs multilayer system was continuously monitored for 90 h while acquiring XRR profiles. Three different starting models for the oxide/contaminants layer were tested for the analysis of XRR data and discussed. The main effect of x-ray exposure, revealed by the three different approaches, is an increase in the thickness of the gallium and arsenic oxides until a saturation value (about 3.0 nm) is reached after about 50 h. Total reflection x-ray fluorescence analysis performed on a couple of twin samples, either irradiated and nonirradiated, confirms that the oxidation process is promoted by x-ray exposure and indicates the presence of a richer As oxide phase at the surface of the x-ray irradiated samples.},

  doi          = {10.1063/1.3054336},

  url          = {https://www.osti.gov/biblio/21185962},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 1,

  volume       = 105,

  place        = {United States},

  year         = {Thu Jan 01 00:00:00 EST 2009},

  month        = {Thu Jan 01 00:00:00 EST 2009}

}

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