Room temperature photoluminescence of CdTe nanocrystals embedded in a SiO{sub 2} matrix deposited on silicon by reactive rf sputtering
- Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del I.P.N., Apdo. Postal 14-740, 07000 Mexico D.F. (Mexico)
CdTe nanocrystals embedded in a SiO{sub 2} matrix were fabricated by radio frequency sputtering employing the texture of a SiO{sub 2} layer as template. The SiO{sub 2} film texture was controlled through the O{sub 2} partial pressure (OPP) in the working atmosphere. The CdTe crystallinity was better for the samples synthesized on rougher SiO{sub 2} films. For these samples, the room temperature photoluminescence spectra showed a signal at 1.74 eV, related to the CdTe nanoparticles. Additional photoluminescence signals at 1.65 and 1.68 eV have been associated to recombination processes at the nanoparticle/matrix interfaces. The results indicate that the employed methodology produces, in a single step, CdTe nanoparticles with light emission at room temperature. After thermal annealing all the samples presented emission due to quantum confinement effects. The photoluminescence emission may be varied from 1.69 to 2.15 eV by appropriate control of the OPP.
- OSTI ID:
- 21182647
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2982089; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
The effect of dielectric confinement on photoluminescence of In{sub 2}O{sub 3}-SiO{sub 2} nanocomposite thin films incorporated by nitrogen
Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering