Optical and electrical characterization of sputter-deposited FeSi{sub 2} and its evolution with annealing temperature
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore and Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)
- Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
Optical and electrical properties of sputter-deposited FeSi{sub 2} thin films on p-Si(100) and SiO{sub 2}/p-Si(100) substrates as well as their evolution with rapid thermal annealing (RTA) temperature have been investigated. Optical absorption measurements were carried out to determine the absorption spectra of FeSi{sub 2} based on the proposed optical absorption model for the double-layer and triple-layer structures. A direct band gap behavior was concluded for both amorphous and polycrystalline semiconducting FeSi{sub 2}. An absorption coefficient in the order of 10{sup 5} cm{sup -1} at 1 eV and a band gap value of {approx}0.86 eV were obtained for the {beta}-FeSi{sub 2}. Hall effect measurements at room temperature indicate heavily doped and n-type conductivity for the FeSi{sub 2} films on p-Si, whose residual carrier concentration was found to be closely correlated with the observed subgap optical absorption via band tailing. The carrier mobility was shown to increase with decreasing residual carrier concentration when the RTA temperature was increased.
- OSTI ID:
- 21182643
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2981198; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION
ABSORPTION SPECTRA
ANNEALING
CARRIER DENSITY
CARRIER MOBILITY
CHARGE CARRIERS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ENERGY GAP
HALL EFFECT
IRON SILICIDES
LAYERS
OPTICAL MODELS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
SURFACE COATING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS