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Title: Interfacial and electrical properties of SrBi{sub 2}Ta{sub 2}O{sub 9}/ZrO{sub 2}/Si heterostructures for ferroelectric memory devices

Abstract

We have investigated the interfacial and frequency dependent electrical properties of metal-ferroelectric-insulator-semiconductor capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) ferroelectric films grown on ZrO{sub 2} buffer layer coated Si. Heterostructure SBT and ZrO{sub 2} thin films were deposited using rf magnetron sputtering. Interfacial and surface roughness parameters of heterostructures were extracted from the simulation of specular x-ray reflectivity data. The structure exhibited clockwise capacitance-voltage hysteresis with a maximum memory window of 2.0 V at a bias voltage of {+-}7 V. Frequency dependent (5 kHz-1 MHz) measurements at room temperature indicated that the clockwise hysteresis originates from the ferroelectric domain reversal. A minimum leakage current density of 4x10{sup -8} A/cm{sup 2} of fabricated capacitors at an applied voltage of {+-}5 V revealed that the ZrO{sub 2} buffer layer prevents the interfacial diffusion between SBT thin film and the substrate, resulting in an improvement of interface quality. The charge retention time of the ferroelectric capacitor was studied as a function of buffer layer thickness.

Authors:
; ;  [1]
  1. Department of Physics and Meteorology, IIT Kharagpur, Kharagpur 721302 (India)
Publication Date:
OSTI Identifier:
21182639
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 104; Journal Issue: 6; Other Information: DOI: 10.1063/1.2978233; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; CAPACITANCE; CURRENT DENSITY; FERROELECTRIC MATERIALS; FREQUENCY DEPENDENCE; HYSTERESIS; LAYERS; LEAKAGE CURRENT; MEMORY DEVICES; REFLECTIVITY; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; STRONTIUM COMPOUNDS; SURFACE COATING; TANTALATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZIRCONIUM OXIDES

Citation Formats

Roy, A, Dhar, A, and Ray, S K. Interfacial and electrical properties of SrBi{sub 2}Ta{sub 2}O{sub 9}/ZrO{sub 2}/Si heterostructures for ferroelectric memory devices. United States: N. p., 2008. Web. doi:10.1063/1.2978233.
Roy, A, Dhar, A, & Ray, S K. Interfacial and electrical properties of SrBi{sub 2}Ta{sub 2}O{sub 9}/ZrO{sub 2}/Si heterostructures for ferroelectric memory devices. United States. doi:10.1063/1.2978233.
Roy, A, Dhar, A, and Ray, S K. Mon . "Interfacial and electrical properties of SrBi{sub 2}Ta{sub 2}O{sub 9}/ZrO{sub 2}/Si heterostructures for ferroelectric memory devices". United States. doi:10.1063/1.2978233.
@article{osti_21182639,
title = {Interfacial and electrical properties of SrBi{sub 2}Ta{sub 2}O{sub 9}/ZrO{sub 2}/Si heterostructures for ferroelectric memory devices},
author = {Roy, A and Dhar, A and Ray, S K},
abstractNote = {We have investigated the interfacial and frequency dependent electrical properties of metal-ferroelectric-insulator-semiconductor capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) ferroelectric films grown on ZrO{sub 2} buffer layer coated Si. Heterostructure SBT and ZrO{sub 2} thin films were deposited using rf magnetron sputtering. Interfacial and surface roughness parameters of heterostructures were extracted from the simulation of specular x-ray reflectivity data. The structure exhibited clockwise capacitance-voltage hysteresis with a maximum memory window of 2.0 V at a bias voltage of {+-}7 V. Frequency dependent (5 kHz-1 MHz) measurements at room temperature indicated that the clockwise hysteresis originates from the ferroelectric domain reversal. A minimum leakage current density of 4x10{sup -8} A/cm{sup 2} of fabricated capacitors at an applied voltage of {+-}5 V revealed that the ZrO{sub 2} buffer layer prevents the interfacial diffusion between SBT thin film and the substrate, resulting in an improvement of interface quality. The charge retention time of the ferroelectric capacitor was studied as a function of buffer layer thickness.},
doi = {10.1063/1.2978233},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 104,
place = {United States},
year = {2008},
month = {9}
}