Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

Journal Article · Mon Sep 01 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2974102· OSTI ID:21182605

Ghazisaeidi, M; Freund, J B; Johnson, H T ^[1]

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1. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated.

• OSTI ID: 21182605
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 5; Other Information: DOI: 10.1063/1.2974102; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ARGON IONS
COORDINATION NUMBER
CRYSTAL DEFECTS
ION BEAMS
MOLECULAR DYNAMICS METHOD
SILICON
SIMULATION