Characterisation and preliminary analysis of the 1996 GaAs keystone test beam detectors
- Department of Physics, University of Sheffield, Hicks Building, Houndsfield Rd, Sheffield S3 7RH (United Kingdom)
- EEV, Waterhouse Lane, Chelmsford (United Kingdom)
The characterisation results from GaAs microstrip detectors prior to the 1996 test beam will be presented, as well some preliminary analysis. Devices were fabricated on 200 {mu}m thick, 3 inch wafers of Semi-Insulating GaAs according to the geometry of the ATLAS1 experiment with rear patterned ohmic contacts. The patterned rear contact was shown to have a benefit on the IV characteristics, reducing the leakage current and increasing the device breakdown voltage. CCE measurements on pad devices are also reported. Successful ac coupling is shown from the dielectric capacitance measurements, and the measurement of the Ge bias resistors implemented for the first time. Preliminary analysis of the test beam data shows a good correlation between the GaAs keystone detector and the silicon telescope. The S/N is 7.488 using tracking and the position resolution is 21 {mu}m.
- OSTI ID:
- 21182523
- Journal Information:
- AIP Conference Proceedings, Vol. 422, Issue 1; Conference: School on instrumentation in elementary particle physics, Leon (Mexico), 7-19 Jul 1997; Other Information: DOI: 10.1063/1.55067; (c) 1998 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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