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Title: Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction

Abstract

We fabricated 20 nm thick PbTiO{sub 3} films via reactive magnetron sputtering and studied the domain switching phenomena and retention properties using piezoresponse force microscopy. We found that multistep deposited PbTiO{sub 3} thin films showed 29% smaller rms roughness (2.5 versus 3.5 nm), 28% smaller coercive voltage (1.68 versus 2.32 V), 100% higher d{sub 33} value, and improved retention characteristic (89% versus 52% of remained poled domain area in 1280 min after poling) than single-step deposited PbTiO{sub 3} thin films. We attribute the improvement to the more complete chemical reaction between PbO and TiO{sub 2} during the film growth.

Authors:
 [1];  [2]; ; ;  [1];  [3];  [4]
  1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
  2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. Department of Physics, Imperial College, London SW7 2AZ (United Kingdom)
  4. Semiconductor R and D Center, Samsung Electronics Co., Ltd., Yongin 449-771 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21176015
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 94; Journal Issue: 9; Other Information: DOI: 10.1063/1.3081120; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL REACTIONS; CRYSTAL GROWTH; DEPOSITION; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; LAYERS; LEAD OXIDES; MICROSCOPY; NANOSTRUCTURES; ROUGHNESS; SPUTTERING; THIN FILMS; TITANATES; TITANIUM OXIDES

Citation Formats

Park, Moonkyu, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, Hong, Seungbum, Kim, Jiyoon, Kim, Yunseok, No, Kwangsoo, Buehlmann, Simon, and Kim, Yong Kwan. Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction. United States: N. p., 2009. Web. doi:10.1063/1.3081120.
Park, Moonkyu, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, Hong, Seungbum, Kim, Jiyoon, Kim, Yunseok, No, Kwangsoo, Buehlmann, Simon, & Kim, Yong Kwan. Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction. United States. https://doi.org/10.1063/1.3081120
Park, Moonkyu, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, Hong, Seungbum, Kim, Jiyoon, Kim, Yunseok, No, Kwangsoo, Buehlmann, Simon, and Kim, Yong Kwan. 2009. "Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction". United States. https://doi.org/10.1063/1.3081120.
@article{osti_21176015,
title = {Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction},
author = {Park, Moonkyu and Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 and Hong, Seungbum and Kim, Jiyoon and Kim, Yunseok and No, Kwangsoo and Buehlmann, Simon and Kim, Yong Kwan},
abstractNote = {We fabricated 20 nm thick PbTiO{sub 3} films via reactive magnetron sputtering and studied the domain switching phenomena and retention properties using piezoresponse force microscopy. We found that multistep deposited PbTiO{sub 3} thin films showed 29% smaller rms roughness (2.5 versus 3.5 nm), 28% smaller coercive voltage (1.68 versus 2.32 V), 100% higher d{sub 33} value, and improved retention characteristic (89% versus 52% of remained poled domain area in 1280 min after poling) than single-step deposited PbTiO{sub 3} thin films. We attribute the improvement to the more complete chemical reaction between PbO and TiO{sub 2} during the film growth.},
doi = {10.1063/1.3081120},
url = {https://www.osti.gov/biblio/21176015}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 94,
place = {United States},
year = {2009},
month = {3}
}