High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate

doi:10.1063/1.3090034

Title: High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate

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Abstract

Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si{sub 0.4}Ge{sub 0.6} seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm{sup 2} V{sup -1} s{sup -1} at a carrier density of 2.36x10{sup 12} cm{sup -2}.

Authors:

Myronov, M.; Leadley, D. R. ^[1]; Shiraki, Y. ^[2]

Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan)

Publication Date:: Mon Mar 02 00:00:00 EST 2009

OSTI Identifier:: 21176013

Resource Type:: Journal Article

Resource Relation:: Journal Name: Applied Physics Letters; Journal Volume: 94; Journal Issue: 9; Other Information: DOI: 10.1063/1.3090034; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CARRIER DENSITY; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRON GAS; ELECTRONIC EQUIPMENT; GERMANIUM; HOLES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL CALCULATIONS

Citation Formats


                    Myronov, M., Leadley, D. R., and Shiraki, Y. High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate.  United States: N. p., 2009. 
        Web.  doi:10.1063/1.3090034.

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                    Myronov, M., Leadley, D. R., & Shiraki, Y. High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate.  United States.  doi:10.1063/1.3090034.

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                    Myronov, M., Leadley, D. R., and Shiraki, Y. Mon .  
        "High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate".  United States.  doi:10.1063/1.3090034.

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@article{osti_21176013,

  title        = {High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate},

  author       = {Myronov, M. and Leadley, D. R. and Shiraki, Y.},

  abstractNote = {Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si{sub 0.4}Ge{sub 0.6} seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm{sup 2} V{sup -1} s{sup -1} at a carrier density of 2.36x10{sup 12} cm{sup -2}.},

  doi          = {10.1063/1.3090034},

  journal      = {Applied Physics Letters},

  number       = 9,

  volume       = 94,

  place        = {United States},

  year         = {Mon Mar 02 00:00:00 EST 2009},

  month        = {Mon Mar 02 00:00:00 EST 2009}

}

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DOI: 10.1063/1.3090034

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