Electrical properties of epitaxial SrTiO{sub 3} tunnel barriers on (001) Pt/SrTiO{sub 3} substrates
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Coherent, epitaxial Pt films with root-mean-square surface roughness values of less than one unit cell were grown on (001) SrTiO{sub 3} substrates by dc sputtering. These Pt films served as bottom electrodes for epitaxial SrTiO{sub 3} tunnel barriers grown by rf magnetron sputtering. The SrTiO{sub 3} barriers were free of pinholes and showed mean surface roughness values of less than one unit cell. Barriers with a thickness of 4.5 nm showed excellent insulating properties and nonlinear current-voltage characteristics. At high bias fields, a reproducible hysteresis and deviation from the ideal tunneling behavior were observed.
- OSTI ID:
- 21175961
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 6; Other Information: DOI: 10.1063/1.3081110; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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