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Title: Electrical properties of epitaxial SrTiO{sub 3} tunnel barriers on (001) Pt/SrTiO{sub 3} substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3081110· OSTI ID:21175961
; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Coherent, epitaxial Pt films with root-mean-square surface roughness values of less than one unit cell were grown on (001) SrTiO{sub 3} substrates by dc sputtering. These Pt films served as bottom electrodes for epitaxial SrTiO{sub 3} tunnel barriers grown by rf magnetron sputtering. The SrTiO{sub 3} barriers were free of pinholes and showed mean surface roughness values of less than one unit cell. Barriers with a thickness of 4.5 nm showed excellent insulating properties and nonlinear current-voltage characteristics. At high bias fields, a reproducible hysteresis and deviation from the ideal tunneling behavior were observed.

OSTI ID:
21175961
Journal Information:
Applied Physics Letters, Vol. 94, Issue 6; Other Information: DOI: 10.1063/1.3081110; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English