Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering
- Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm{sup 2} V{sup -1} s{sup -1}, a free electron density of 6.0x10{sup 20} cm{sup -3}, and an electrical resistivity of 2.26x10{sup -4} {omega} cm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.
- OSTI ID:
- 21175929
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 4; Other Information: DOI: 10.1063/1.3074373; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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