skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxy of Ge-Sb-Te phase-change memory alloys

Abstract

The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge{sub 2}Sb{sub 2}Te{sub 5} composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

Authors:
; ; ; ; ;  [1]; ;  [2]
  1. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  2. Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan)
Publication Date:
OSTI Identifier:
21175925
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 94; Journal Issue: 4; Other Information: DOI: 10.1063/1.3072615; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; AMORPHOUS STATE; ANTIMONY ALLOYS; CRYSTAL GROWTH; GALLIUM ANTIMONIDES; GERMANIUM ALLOYS; INTERATOMIC DISTANCES; MOLECULAR BEAM EPITAXY; PHASE CHANGE MATERIALS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TERNARY ALLOY SYSTEMS; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTRA

Citation Formats

Braun, Wolfgang, Shayduk, Roman, Flissikowski, Timur, Ramsteiner, Manfred, Grahn, Holger T, Riechert, Henning, Fons, Paul, and Kolobov, Alex. Epitaxy of Ge-Sb-Te phase-change memory alloys. United States: N. p., 2009. Web. doi:10.1063/1.3072615.
Braun, Wolfgang, Shayduk, Roman, Flissikowski, Timur, Ramsteiner, Manfred, Grahn, Holger T, Riechert, Henning, Fons, Paul, & Kolobov, Alex. Epitaxy of Ge-Sb-Te phase-change memory alloys. United States. doi:10.1063/1.3072615.
Braun, Wolfgang, Shayduk, Roman, Flissikowski, Timur, Ramsteiner, Manfred, Grahn, Holger T, Riechert, Henning, Fons, Paul, and Kolobov, Alex. Mon . "Epitaxy of Ge-Sb-Te phase-change memory alloys". United States. doi:10.1063/1.3072615.
@article{osti_21175925,
title = {Epitaxy of Ge-Sb-Te phase-change memory alloys},
author = {Braun, Wolfgang and Shayduk, Roman and Flissikowski, Timur and Ramsteiner, Manfred and Grahn, Holger T and Riechert, Henning and Fons, Paul and Kolobov, Alex},
abstractNote = {The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge{sub 2}Sb{sub 2}Te{sub 5} composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.},
doi = {10.1063/1.3072615},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 94,
place = {United States},
year = {2009},
month = {1}
}