Epitaxy of Ge-Sb-Te phase-change memory alloys

Journal Article · Mon Jan 26 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3072615· OSTI ID:21175925

Braun, Wolfgang; Shayduk, Roman; Flissikowski, Timur; Ramsteiner, Manfred; Grahn, Holger T; Riechert, Henning ^[1]; Fons, Paul; Kolobov, Alex ^[2]

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1. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
2. Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan)

The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge{sub 2}Sb{sub 2}Te{sub 5} composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

• OSTI ID: 21175925
• Journal Information: Applied Physics Letters, Vol. 94, Issue 4; Other Information: DOI: 10.1063/1.3072615; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
AMORPHOUS STATE
ANTIMONY ALLOYS
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
GERMANIUM ALLOYS
INTERATOMIC DISTANCES
MOLECULAR BEAM EPITAXY
PHASE CHANGE MATERIALS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TELLURIUM ALLOYS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TERNARY ALLOY SYSTEMS
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTRA