Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
- Institute of Materials Research and Engineering, Singapore 117602 (Singapore)
- Department of Physics, University of Hong Kong (Hong Kong)
Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 deg. C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at {approx}3.0 eV (415 nm) and the strong green-yellow band at {approx}2.2 eV (560 nm). Two weak bands including the ultraviolet band at {approx}3.8 eV and the near infrared band at {approx}1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.
- OSTI ID:
- 21175923
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 4; Other Information: DOI: 10.1063/1.3068002; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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