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Title: Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy

Abstract

Ferroelectric BaTiO{sub 3} thin films were epitaxially grown on (001) GaAs substrate using SrTiO{sub 3} as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO{sub 3} buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100]SrTiO{sub 3} parallel [110]GaAs in-plane relationship. Thereupon, a highly c-oriented BaTiO{sub 3} thin film was grown on SrTiO{sub 3}/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO{sub 3}(150 nm)/SrTiO{sub 3}/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 {mu}C/cm{sup 2} at 600 kV/cm and a small leakage current density of 2.9x10{sup -7} A/cm{sup 2} at 200 kV/cm.

Authors:
; ;  [1]
  1. Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University, Hong Kong (China)
Publication Date:
OSTI Identifier:
21175878
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 94; Journal Issue: 3; Other Information: DOI: 10.1063/1.3075955; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; BCC LATTICES; CRYSTAL GROWTH; CURRENT DENSITY; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; GALLIUM ARSENIDES; HYSTERESIS; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; PEROVSKITE; POLARIZATION; SEMICONDUCTOR LASERS; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS

Citation Formats

Huang, W., Wu, Z. P., and Hao, J. H.. Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy. United States: N. p., 2009. Web. doi:10.1063/1.3075955.
Huang, W., Wu, Z. P., & Hao, J. H.. Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy. United States. doi:10.1063/1.3075955.
Huang, W., Wu, Z. P., and Hao, J. H.. Mon . "Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy". United States. doi:10.1063/1.3075955.
@article{osti_21175878,
title = {Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy},
author = {Huang, W. and Wu, Z. P. and Hao, J. H.},
abstractNote = {Ferroelectric BaTiO{sub 3} thin films were epitaxially grown on (001) GaAs substrate using SrTiO{sub 3} as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO{sub 3} buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100]SrTiO{sub 3} parallel [110]GaAs in-plane relationship. Thereupon, a highly c-oriented BaTiO{sub 3} thin film was grown on SrTiO{sub 3}/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO{sub 3}(150 nm)/SrTiO{sub 3}/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 {mu}C/cm{sup 2} at 600 kV/cm and a small leakage current density of 2.9x10{sup -7} A/cm{sup 2} at 200 kV/cm.},
doi = {10.1063/1.3075955},
journal = {Applied Physics Letters},
number = 3,
volume = 94,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2009},
month = {Mon Jan 19 00:00:00 EST 2009}
}