GaSb-based, 2.2 {mu}m type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

Journal Article · Mon Jan 12 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3072596· OSTI ID:21175875

Rodriguez, J B; Cerutti, L; Tournie, E ^[1]

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1. Institut d'Electronique du Sud, UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France)

We report on a Sb-based type-I laser grown on GaAs substrate, emitting continuous wave at room temperature around 2.2 {mu}m. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum wells embedded in AlGaAsSb barriers. Despite the large lattice mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 deg. C with threshold current densities in the range of 1.5-2.2 kA/cm{sup 2}. An optical output power of 3.7 mW was obtained at 20 deg. C.

• OSTI ID: 21175875
• Journal Information: Applied Physics Letters, Vol. 94, Issue 2; Other Information: DOI: 10.1063/1.3072596; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CURRENT DENSITY
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT