Infrared analysis of hole properties of Mg-doped p-type InN films

Journal Article · Mon Dec 08 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3006052· OSTI ID:21175802

Fujiwara, Masayuki; Ishitani, Yoshihiro; Xinqiang, Wang; Che, Song-Bek; Yoshikawa, Akihiko ^[1]

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1. Graduate School of Electrical and Electronics Engineering, Venture Business Laboratory, Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522 (Japan)

Mg-doped InN films grown by plasma-assisted molecular beam epitaxy were characterized by infrared reflectance. Signatures of p-type conductivity in the spectra were obtained in the same doping density range where the existence of net acceptors was found by electrolyte capacitance-voltage measurements. Numerical spectrum analysis, which takes into account the large broadening factor of the normal mode energies of longitudinal optical phonon-plasmon coupling yielded high hole densities in the range of (0.1-1.2)x10{sup 19} cm{sup -3} and optical mobilities in the range of 25-70 cm{sup 2}/V s.

• OSTI ID: 21175802
• Journal Information: Applied Physics Letters, Vol. 93, Issue 23; Other Information: DOI: 10.1063/1.3006052; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTROLYTES
HOLES
INDIUM NITRIDES
INFRARED SPECTRA
MAGNESIUM
MOLECULAR BEAM EPITAXY
PHONONS
PLASMA
SEMICONDUCTOR MATERIALS
THIN FILMS