Effect of structural anisotropy on electronic conduction in delafossite tin doped copper indium oxide thin films

Journal Article · Mon Nov 10 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2982915· OSTI ID:21175750

Singh, Mandeep; Mehta, B R ^[1]

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1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India)

Sn doped CuInO{sub 2} thin films having a single delafossite phase have been synthesized by magnetron sputtering technique. A gradual decrease in the activation energy from 0.43 to about 0.10 eV and a large increase in conductivity are observed in Sn doped samples with increasing fraction of crystallites having (006) orientation due to an increase in substrate temperature. Due to thermally activated carrier transport along O-A-O layers and activated carrier generation along BO{sub 6} layers, crystallite orientation becomes a crucial factor in controlling the conduction in delafossite thin films.

• OSTI ID: 21175750
• Journal Information: Applied Physics Letters, Vol. 93, Issue 19; Other Information: DOI: 10.1063/1.2982915; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANISOTROPY
CARRIER MOBILITY
COPPER COMPOUNDS
CRYSTALS
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
INDIUM OXIDES
LAYERS
SPUTTERING
SUBSTRATES
THIN FILMS
TIN