Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO{sub 2} thin film

Journal Article · Mon Nov 10 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3028070· OSTI ID:21175741

Kang, Seung-Hee; Kumar, Ch Kiran; Kim, Eui-Tae ^[1]; Lee, Zonghoon ^[2]; Kim, Kyung-Hyun; Huh, Chul ^[3]

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1. Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764 (Korea, Republic of)
2. National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 72-150, Berkeley, California 94720 (United States)
3. Electronics and Telecommunications Research Institute, Daeduk Science Town, Daejeon 305-350 (Korea, Republic of)

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO{sub 2} thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO{sub 2}/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO{sub 2}/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

• OSTI ID: 21175741
• Journal Information: Applied Physics Letters, Vol. 93, Issue 19; Other Information: DOI: 10.1063/1.3028070; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SELENIDES
CHEMICAL VAPOR DEPOSITION
ELECTROLUMINESCENCE
ELECTRONIC EQUIPMENT
LIGHT EMITTING DIODES
P-N JUNCTIONS
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
TITANIUM OXIDES
ZINC SULFIDES