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Title: Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Abstract

We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentional donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.

Authors:
; ; ; ; ; ; ;  [1]; ;  [2]; ; ;  [1];  [3]
  1. Institute of High Pressure Physics UNIPRESS, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  2. TopGaN Ltd., Sokolowska 29/37 01-142 Warszawa (Poland)
  3. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
21175693
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 17; Other Information: DOI: 10.1063/1.3013352; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; HOLES; ION MICROPROBE ANALYSIS; LAYERS; MAGNESIUM; MASS SPECTRA; MASS SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; VAPOR PHASE EPITAXY

Citation Formats

Suski, T, Litwin-Staszewska, E, Piotrzkowski, R, Krysko, M, Nowak, G, Franssen, G, Dmowski, L H, Lucznik, B, Czernecki, R, Grzanka, S, Leszczynski, M, Perlin, P, Grzegory, I, TopGaN Ltd., Sokolowska 29/37 01-142 Warsaw, and Jakiela, R. Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy. United States: N. p., 2008. Web. doi:10.1063/1.3013352.
Suski, T, Litwin-Staszewska, E, Piotrzkowski, R, Krysko, M, Nowak, G, Franssen, G, Dmowski, L H, Lucznik, B, Czernecki, R, Grzanka, S, Leszczynski, M, Perlin, P, Grzegory, I, TopGaN Ltd., Sokolowska 29/37 01-142 Warsaw, & Jakiela, R. Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy. United States. https://doi.org/10.1063/1.3013352
Suski, T, Litwin-Staszewska, E, Piotrzkowski, R, Krysko, M, Nowak, G, Franssen, G, Dmowski, L H, Lucznik, B, Czernecki, R, Grzanka, S, Leszczynski, M, Perlin, P, Grzegory, I, TopGaN Ltd., Sokolowska 29/37 01-142 Warsaw, and Jakiela, R. 2008. "Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy". United States. https://doi.org/10.1063/1.3013352.
@article{osti_21175693,
title = {Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy},
author = {Suski, T and Litwin-Staszewska, E and Piotrzkowski, R and Krysko, M and Nowak, G and Franssen, G and Dmowski, L H and Lucznik, B and Czernecki, R and Grzanka, S and Leszczynski, M and Perlin, P and Grzegory, I and TopGaN Ltd., Sokolowska 29/37 01-142 Warsaw and Jakiela, R},
abstractNote = {We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentional donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.},
doi = {10.1063/1.3013352},
url = {https://www.osti.gov/biblio/21175693}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 93,
place = {United States},
year = {Mon Oct 27 00:00:00 EDT 2008},
month = {Mon Oct 27 00:00:00 EDT 2008}
}