Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN
Abstract
This study reports on the growth of high-quality nonpolar m-plane [1100] InN films on free-standing m-plane GaN substrates by plasma-assisted molecular beam epitaxy. Optimized growth conditions (In/N ratio {approx}1 and T=390-430 deg. C) yielded very smooth InN films with undulated features elongated along the [1120] orientation. This directionality is associated with the underlying defect structure shown by the anisotropy of x-ray rocking curve widths parallel to the [1120] (i.e., 0.24 deg. - 0.34 deg.) and [0001] (i.e., 1.2 deg. - 2.7 deg.) orientations. Williamson-Hall analysis and transmission electron microscopy identified the mosaic tilt and lateral coherence length and their associations with different densities of dislocations and basal-plane stacking faults. Ultimately, very low band gap energies of {approx}0.67 eV were measured by optical absorption similar to the best c-plane InN.
- Authors:
-
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
- U. S. Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
- Publication Date:
- OSTI Identifier:
- 21175691
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 93; Journal Issue: 17; Other Information: DOI: 10.1063/1.3001806; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ABSORPTION; ANISOTROPY; COHERENCE LENGTH; CRYSTAL GROWTH; CRYSTALS; DISLOCATIONS; FILMS; GALLIUM NITRIDES; GRAIN ORIENTATION; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; STACKING FAULTS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Citation Formats
Koblmueller, G, Hirai, A, Wu, F, Gallinat, C S, Speck, J S, Metcalfe, G D, Shen, H, and Wraback, M. Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN. United States: N. p., 2008.
Web. doi:10.1063/1.3001806.
Koblmueller, G, Hirai, A, Wu, F, Gallinat, C S, Speck, J S, Metcalfe, G D, Shen, H, & Wraback, M. Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN. United States. https://doi.org/10.1063/1.3001806
Koblmueller, G, Hirai, A, Wu, F, Gallinat, C S, Speck, J S, Metcalfe, G D, Shen, H, and Wraback, M. 2008.
"Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN". United States. https://doi.org/10.1063/1.3001806.
@article{osti_21175691,
title = {Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN},
author = {Koblmueller, G and Hirai, A and Wu, F and Gallinat, C S and Speck, J S and Metcalfe, G D and Shen, H and Wraback, M},
abstractNote = {This study reports on the growth of high-quality nonpolar m-plane [1100] InN films on free-standing m-plane GaN substrates by plasma-assisted molecular beam epitaxy. Optimized growth conditions (In/N ratio {approx}1 and T=390-430 deg. C) yielded very smooth InN films with undulated features elongated along the [1120] orientation. This directionality is associated with the underlying defect structure shown by the anisotropy of x-ray rocking curve widths parallel to the [1120] (i.e., 0.24 deg. - 0.34 deg.) and [0001] (i.e., 1.2 deg. - 2.7 deg.) orientations. Williamson-Hall analysis and transmission electron microscopy identified the mosaic tilt and lateral coherence length and their associations with different densities of dislocations and basal-plane stacking faults. Ultimately, very low band gap energies of {approx}0.67 eV were measured by optical absorption similar to the best c-plane InN.},
doi = {10.1063/1.3001806},
url = {https://www.osti.gov/biblio/21175691},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 93,
place = {United States},
year = {Mon Oct 27 00:00:00 EDT 2008},
month = {Mon Oct 27 00:00:00 EDT 2008}
}