Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

Journal Article · Mon Oct 20 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2970085· OSTI ID:21175687

Yoon, Joo-Won; Ohmi, Shun-ichiro; Park, Byung-Eun; Ishiwara, Hiroshi ^[1]

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1. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the SiO{sub 2}/Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.

• OSTI ID: 21175687
• Journal Information: Applied Physics Letters, Vol. 93, Issue 16; Other Information: DOI: 10.1063/1.2970085; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CAPACITORS
COPOLYMERS
ELECTRIC POTENTIAL
ETCHING
FERROELECTRIC MATERIALS
FLUORINATED ALIPHATIC HYDROCARBONS
GOLD
KRYPTON
OXYGEN
OXYGEN IONS
PLASMA
POLYVINYLS
SEMICONDUCTOR DIODES
SILICON OXIDES
SPUTTERING
THIN FILMS