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Title: The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter

Abstract

A microplasma transistor has been realized by injecting electrons into the sheath of a rare gas plasma with a low voltage (|V{sub b}|<25 V), controllable electron emitter. Integrating a solid state emitter with a 500 {mu}m diam. cylindrical microcavity plasma yields a three terminal current-controlled device capable of modulating the conduction current and light intensity generated by the microplasma. For an emitter voltage of V{sub b}=-10 V, the rms charge carried by the conduction current of a Ne microplasma is tripled relative to the value measured for no current injection. Similarly, the wavelength-integrated visible emission is increased by 2.7 and 4 dB for V{sub b}=-5 and -25 V, respectively. From the continuity equation for charged particle flux in the sheath, the electron density at the edge of the sheath is determined to be n{sub s}=(3{+-}1)x10{sup 12} cm{sup -3} for an electron temperature in the 1-5 eV range. Energizing the electron emitter is estimated to reduce the ratio of the ion to electron number densities at the cathode surface from 25 to 14. A parameter {beta}{sub p}, defined as the microplasma transistor conductance normalized to that for the conventional plasma device (i.e., V{sub b}=0), is introduced and found to be {approx}40more » for this unoptimized device when |V{sub b}|=5 V.« less

Authors:
;  [1]
  1. Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, 1406 West Green Street, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
21175683
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 16; Other Information: DOI: 10.1063/1.2981573; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; CONTINUITY EQUATIONS; ELECTRIC POTENTIAL; ELECTRON DENSITY; ELECTRON EMISSION; ELECTRON TEMPERATURE; ELECTRONS; ION TEMPERATURE; OPTICS; PHOTON EMISSION; PLASMA; PLASMA DENSITY; PLASMA SHEATH; TRANSISTORS; WAVEGUIDES

Citation Formats

Chen, K -F, and Eden, J G. The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter. United States: N. p., 2008. Web. doi:10.1063/1.2981573.
Chen, K -F, & Eden, J G. The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter. United States. doi:10.1063/1.2981573.
Chen, K -F, and Eden, J G. Mon . "The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter". United States. doi:10.1063/1.2981573.
@article{osti_21175683,
title = {The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter},
author = {Chen, K -F and Eden, J G},
abstractNote = {A microplasma transistor has been realized by injecting electrons into the sheath of a rare gas plasma with a low voltage (|V{sub b}|<25 V), controllable electron emitter. Integrating a solid state emitter with a 500 {mu}m diam. cylindrical microcavity plasma yields a three terminal current-controlled device capable of modulating the conduction current and light intensity generated by the microplasma. For an emitter voltage of V{sub b}=-10 V, the rms charge carried by the conduction current of a Ne microplasma is tripled relative to the value measured for no current injection. Similarly, the wavelength-integrated visible emission is increased by 2.7 and 4 dB for V{sub b}=-5 and -25 V, respectively. From the continuity equation for charged particle flux in the sheath, the electron density at the edge of the sheath is determined to be n{sub s}=(3{+-}1)x10{sup 12} cm{sup -3} for an electron temperature in the 1-5 eV range. Energizing the electron emitter is estimated to reduce the ratio of the ion to electron number densities at the cathode surface from 25 to 14. A parameter {beta}{sub p}, defined as the microplasma transistor conductance normalized to that for the conventional plasma device (i.e., V{sub b}=0), is introduced and found to be {approx}40 for this unoptimized device when |V{sub b}|=5 V.},
doi = {10.1063/1.2981573},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 93,
place = {United States},
year = {2008},
month = {10}
}