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Title: Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting

Abstract

We present measurements on two dimensionally patterned GaN{sub x}As{sub 1-x} dots fabricated in a GaAs matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The lithographically patterned GaN{sub x}As{sub 1-x} regions are imaged by ballistic electron emission microscopy (BEEM). By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents from unpatterned GaN{sub x}As{sub 1-x} films exhibit a decrease in {gamma}-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.

Authors:
; ;  [1]
  1. Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138 (United States)
Publication Date:
OSTI Identifier:
21175574
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 10; Other Information: DOI: 10.1063/1.2982424; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; ELECTRON EMISSION; ELECTRON MICROSCOPY; ENERGY BEAM DEPOSITION; FIELD EMISSION; GALLIUM ARSENIDES; GALLIUM NITRIDES; ION IMPLANTATION; LASER RADIATION; MELTING; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NITROGEN IONS; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; THIN FILMS

Citation Formats

Kim, Taeseok, Aziz, Michael J, and Narayanamurti, Venkatesh. Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting. United States: N. p., 2008. Web. doi:10.1063/1.2982424.
Kim, Taeseok, Aziz, Michael J, & Narayanamurti, Venkatesh. Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting. United States. doi:10.1063/1.2982424.
Kim, Taeseok, Aziz, Michael J, and Narayanamurti, Venkatesh. Mon . "Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting". United States. doi:10.1063/1.2982424.
@article{osti_21175574,
title = {Two dimensionally patterned GaN{sub x}As{sub 1-x}/GaAs nanostructures using N{sup +} implantation followed by pulsed laser melting},
author = {Kim, Taeseok and Aziz, Michael J and Narayanamurti, Venkatesh},
abstractNote = {We present measurements on two dimensionally patterned GaN{sub x}As{sub 1-x} dots fabricated in a GaAs matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The lithographically patterned GaN{sub x}As{sub 1-x} regions are imaged by ballistic electron emission microscopy (BEEM). By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents from unpatterned GaN{sub x}As{sub 1-x} films exhibit a decrease in {gamma}-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.},
doi = {10.1063/1.2982424},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 93,
place = {United States},
year = {2008},
month = {9}
}