In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

Journal Article · Mon Sep 08 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2981689· OSTI ID:21175573

Felisari, L; Grillo, V; Martelli, F ^[1]; Trotta, R; Polimeni, A; Capizzi, M ^[2]; Jabeen, F ^[1]; Mariucci, L ^[3]

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1. TASC INFM-CNR, S.S. 14, km 163.5, I-34012 Trieste (Italy)
2. CNISM and Dipartimento di Fisica, Universita di Roma 'La Sapienza', I-00185 Roma (Italy)
3. IFN-CNR, via Cineto Romano 42, 00156 Roma (Italy)

GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures.

• OSTI ID: 21175573
• Journal Information: Applied Physics Letters, Vol. 93, Issue 10; Other Information: DOI: 10.1063/1.2981689; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRIGHTNESS
DIFFUSION
ENERGY GAP
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
HYDROGEN
HYDROGENATION
IMAGES
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS