Crystal data and indirect optical transitions in Tl{sub 2}InGaSe{sub 4} crystals

Journal Article · Tue Jun 03 00:00:00 EDT 2008 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2007.06.025· OSTI ID:21144023

Gasanly, N M ^[1]

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1. Department of Physics, Middle East Technical University, 06531 Ankara (Turkey)

The room temperature crystal data and the optical properties of the Bridgman method grown Tl{sub 2}InGaSe{sub 4} crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl{sub 2}InGaSe{sub 4} is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and {beta} = 95.03{sup o}. The temperature dependence of the optical band gap of Tl{sub 2}InGaSe{sub 4} single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient {gamma} = -3.53 x 10{sup -4} eV/K.

• OSTI ID: 21144023
• Journal Information: Materials Research Bulletin, Vol. 43, Issue 6; Other Information: DOI: 10.1016/j.materresbull.2007.06.025; PII: S0025-5408(07)00263-2; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
BRIDGMAN METHOD
CRYSTAL GROWTH
ENERGY GAP
EV RANGE 01-10
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LATTICE PARAMETERS
MONOCLINIC LATTICES
MONOCRYSTALS
OPTICAL PROPERTIES
SELENIDES
SEMICONDUCTOR MATERIALS
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THALLIUM COMPOUNDS
X RADIATION
X-RAY DIFFRACTION