Thickness-tunable terahertz plasma oscillations in a semiconductor slab excited by femtosecond optical pulses
- Max-Planck-Institut fur Festkoerperforschung, Heisenberg Str. 1, 70569 Stuttgart (Germany)
We report on the observation of terahertz oscillations in an electron-hole plasma optically excited by a femtosecond pulse in the {mu}m-sized slab of low-temperature-grown-GaAs (LT-GaAs) grown on the GaAs substrate. The frequency of oscillations is shown to be inversely proportional to the slab thickness. It is suggested that the LT-GaAs slab serves as a resonant cavity for traveling plasma waves, which have been generated as a consequence of the shock interaction of photoexcited electron plasma with the GaAs/LT-GaAs interface. The instantaneous diffusion of photoexcited plasma inward the material is driven by the density gradient over the Beer's law distributed carrier population and is evidenced to be a main reason of the shock interaction in the localized plasma. The frequencies of oscillations observed are 3.5 times larger that the inverse electron transit time in the LT-GaAs slab, suggesting the 'ballistic' regime for plasma wave propagation to occur. The oscillations have been observed in the photocurrent autocorrelation measurements. The dynamical electric field at the GaAs/LT-GaAs interface arising due to the instantaneous diffusion of photoexcited electrons inward the material was studied through the transient reflectivity change responses, which have been measured simultaneously with photocurrent.
- OSTI ID:
- 21143600
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 3; Other Information: DOI: 10.1103/PhysRevB.78.035328; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CAVITY RESONATORS
DIFFUSION
ELECTRIC FIELDS
ELECTRONS
EXCITATION
GALLIUM ARSENIDES
INTERACTIONS
INTERFACES
OSCILLATIONS
PLASMA WAVES
PULSES
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SLABS
SOLID-STATE PLASMA
SUBSTRATES
THICKNESS
THZ RANGE
VELOCITY