Selective rearrangement of Nd{sup 3+} centers in LiNbO{sub 3} under ferroelectric domain inversion by electron beam writing
- Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain)
Different values of the electronic charge provided by a direct electron beam writing system have been used to produce polarization inverted domain regions in the micrometer range on Nd{sup 3+} optically activated LiNbO{sub 3}. The effect of the electronic charge on the Nd{sup 3+} center structure has been studied by means of low-temperature luminescence from Nd{sup 3+} ions. The axial crystal field acting on the Nd{sup 3+} centers has been analyzed through the {sup 4}F{sub 3/2} energy-level splitting of the Nd{sup 3+} ions. From there we have determined the position of Nd{sup 3+} ions into the Li{sup +} octahedra for the different unequivalent centers in domains reversed with different electronic doses. The results show that the axial crystal field acting on the unequivalent Nd{sup 3+} centers can be selectively modified by means of the different doses applied to produce the inversion of the polarization. Moreover, a control of the discrete shifts suffered by the Nd{sup 3+} ions into the Li{sup +} octahedra after the inversion process can be carried out in the range 0-0.02 A by selecting the type of Nd center to be shifted by means of the different electronic charge. The behavior of each Nd{sup 3+} center after the polarization inversion under different doses can be discriminated and the different nature, as well as the polar character of the Nd{sup 3+} centers, is clearly manifested.
- OSTI ID:
- 21143576
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 1; Other Information: DOI: 10.1103/PhysRevB.78.014114; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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