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Title: Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC

Abstract

This paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at temperatures up to 1300 deg. C. Identification was achieved by their formation and annealing characteristics, by the energies of their local vibrational modes, by the nature of their splitting in {sup 13}C isotope enriched samples, and by comparison with published results of ab initio local density approximation calculations. Four related but different forms of this defect have been predicted, two with S=0 and two with S=1, and their calculated properties are consistent with the experimental results presented here. The excitation processes for the optical centers within the irradiated region are quite unusual. For a 488 nm laser excitation, both spin states of the defect are observed by up-conversion. For a 325 nm excitation, the optical centers are only observed at the periphery of the high-dose irradiated regions after the sample has been exposed to an intense 325 nm beam. In this case, the optical centers are mainly in the S=0 state. The centers are eliminated by annealingmore » in the range of 800-950 deg. C.« less

Authors:
; ; ; ;  [1];  [2]
  1. Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
  2. (Germany)
Publication Date:
OSTI Identifier:
21143547
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 77; Journal Issue: 19; Other Information: DOI: 10.1103/PhysRevB.77.195203; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; APPROXIMATIONS; CARBON 13; COMPARATIVE EVALUATIONS; CONVERSION; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRONS; EXCITATION; IRRADIATION; LASER RADIATION; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPIN; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 1000-4000 K

Citation Formats

Steeds, J. W., Sullivan, W., Furkert, S. A., Evans, G. A., Wellmann, P. J., and Department of Materials Science and Engineering, University of Erlangen-Nuernberg, 91058 Erlangen. Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC. United States: N. p., 2008. Web. doi:10.1103/PHYSREVB.77.195203.
Steeds, J. W., Sullivan, W., Furkert, S. A., Evans, G. A., Wellmann, P. J., & Department of Materials Science and Engineering, University of Erlangen-Nuernberg, 91058 Erlangen. Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC. United States. doi:10.1103/PHYSREVB.77.195203.
Steeds, J. W., Sullivan, W., Furkert, S. A., Evans, G. A., Wellmann, P. J., and Department of Materials Science and Engineering, University of Erlangen-Nuernberg, 91058 Erlangen. Thu . "Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC". United States. doi:10.1103/PHYSREVB.77.195203.
@article{osti_21143547,
title = {Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC},
author = {Steeds, J. W. and Sullivan, W. and Furkert, S. A. and Evans, G. A. and Wellmann, P. J. and Department of Materials Science and Engineering, University of Erlangen-Nuernberg, 91058 Erlangen},
abstractNote = {This paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at temperatures up to 1300 deg. C. Identification was achieved by their formation and annealing characteristics, by the energies of their local vibrational modes, by the nature of their splitting in {sup 13}C isotope enriched samples, and by comparison with published results of ab initio local density approximation calculations. Four related but different forms of this defect have been predicted, two with S=0 and two with S=1, and their calculated properties are consistent with the experimental results presented here. The excitation processes for the optical centers within the irradiated region are quite unusual. For a 488 nm laser excitation, both spin states of the defect are observed by up-conversion. For a 325 nm excitation, the optical centers are only observed at the periphery of the high-dose irradiated regions after the sample has been exposed to an intense 325 nm beam. In this case, the optical centers are mainly in the S=0 state. The centers are eliminated by annealing in the range of 800-950 deg. C.},
doi = {10.1103/PHYSREVB.77.195203},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 19,
volume = 77,
place = {United States},
year = {Thu May 15 00:00:00 EDT 2008},
month = {Thu May 15 00:00:00 EDT 2008}
}