Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.77.115435· OSTI ID:21143116

Choi, Soojeong ^[1]; Kim, Tong-Ho; Wolter, Scott; Brown, April ^[2]; Everitt, Henry O ^[1]; Losurdo, Maria; Bruno, Giovanni ^[3]

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1. Department of Physics, Duke University, Durham, North Carolina 27708 (United States)
2. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
3. Institute of Inorganic Methodologies and of Plasmas-CNR, via Orabona, 4-70126 Bari (Italy)

Indium kinetics and evidence for indium segregation on the GaN (0001) surface are investigated via in situ spectroscopic ellipsometry. Indium deposition exhibits two stable states at coverages of 1.0 and 1.7 ML within the temperature range of 630-688 deg. C. Formation of each layer is governed by two kinetic processes: nuclei formation and nuclei-mediated layer adsorption. The measured desorption activation energies of nuclei of the first (2.04 eV) and second (2.33 eV) monolayers are lower than the desorption activation energies of the aggregated first (2.64 eV) and second (2.53 eV) monolayers, respectively. This suggests that adatoms preferentially interact with the nuclei and laterally aggregate.

• OSTI ID: 21143116
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 77, Issue 11; Other Information: DOI: 10.1103/PhysRevB.77.115435; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ADSORPTION
AGGLOMERATION
DEPOSITION
DESORPTION
ELLIPSOMETRY
EPITAXY
GALLIUM NITRIDES
INDIUM
KINETICS
LAYERS
SEGREGATION
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0400-1000 K