Effect of the microwave oven on structural, morphological and electrical properties of SrBi{sub 4}Ti{sub 4}O{sub 15} thin films grown on Pt/Ti/SiO{sub 2}/Si substrates by a soft chemical method
- Chemistry Institute, Department of Chemistry-Physics, UNESP C.P. 355, CEP 14801-970 Araraquara-SP (Brazil)
Thin films of SrBi{sub 4}Ti{sub 4}O{sub 15} (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 deg. C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P{sub r} and a coercive field E{sub c} values of 5.1 {mu}C/cm{sup 2} and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 {mu}C/cm{sup 2} and 85 kV/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10{sup 10} switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories.
- OSTI ID:
- 21140726
- Journal Information:
- Materials Characterization, Vol. 59, Issue 6; Other Information: DOI: 10.1016/j.matchar.2007.05.022; PII: S1044-5803(07)00211-2; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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