Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling
- Thin Films and Nanostructures, Department of Physics, Bielefeld University, P.O. Box 100131, 33501 Bielefeld (Germany)
- Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Kassel University, Heinrich-Plett-Strasse 40, D-34132 Kassel (Germany)
Artificial ferrimagnets have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment (IB) induced patterning of the exchange bias coupling of a single layer reference electrode in magnetic tunnel junctions with He ions is possible. For applications as, e.g., special types of magnetic logic, a combination of the IB induced patterning of the exchange bias coupling and the implementation of an artificial ferrimagnet as reference electrode is desirable. Here, investigations for a pinned artificial ferrimagnet with a Ru interlayer, which is frequently used in magnetic tunnel junctions, are presented. It is shown that in this kind of samples the exchange bias can be increased or rotated by IB induced magnetic patterning with 10 keV He ions without a destruction of the antiferromagnetic interlayer exchange coupling. An IrMn/Py/Co/Cu/Co stack turned out to be more sensitive to the influence of IB than the Ru based artificial ferrimagnet.
- OSTI ID:
- 21137361
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 12; Other Information: DOI: 10.1063/1.2939072; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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