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Title: Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

Abstract

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample where the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.

Authors:
;  [1]; ;  [1];  [2];  [3];  [4];  [3];  [5]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Singapore)
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  4. (United States)
  5. Institute of Microelectronics, Singapore Science Park II, Singapore 117685 (Singapore)
Publication Date:
OSTI Identifier:
21137276
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 103; Journal Issue: 10; Other Information: DOI: 10.1063/1.2921835; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM ARSENIDES; GERMANIUM; LAYERS; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; NUCLEATION; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; X-RAY DIFFRACTION

Citation Formats

Tanoto, H., Loke, W. K., Yoon, S. F., Chen, K. P., Singapore-MIT Alliance, Nanyang Drive, Singapore 637460, Fitzgerald, E. A., Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, Massachusetts 02139, Dohrman, C., and Narayanan, B. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy. United States: N. p., 2008. Web. doi:10.1063/1.2921835.
Tanoto, H., Loke, W. K., Yoon, S. F., Chen, K. P., Singapore-MIT Alliance, Nanyang Drive, Singapore 637460, Fitzgerald, E. A., Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, Massachusetts 02139, Dohrman, C., & Narayanan, B. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy. United States. doi:10.1063/1.2921835.
Tanoto, H., Loke, W. K., Yoon, S. F., Chen, K. P., Singapore-MIT Alliance, Nanyang Drive, Singapore 637460, Fitzgerald, E. A., Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, Massachusetts 02139, Dohrman, C., and Narayanan, B. Thu . "Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy". United States. doi:10.1063/1.2921835.
@article{osti_21137276,
title = {Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy},
author = {Tanoto, H. and Loke, W. K. and Yoon, S. F. and Chen, K. P. and Singapore-MIT Alliance, Nanyang Drive, Singapore 637460 and Fitzgerald, E. A. and Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, Massachusetts 02139 and Dohrman, C. and Narayanan, B.},
abstractNote = {In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample where the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.},
doi = {10.1063/1.2921835},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 103,
place = {United States},
year = {2008},
month = {5}
}