FTIR, Micro-Raman and Ellipsometry Studies on Silicon Oxynitride Layers Synthesized by Low Energy Ion Implantation
- Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai--400 098 (India)
Single crystal silicon were implanted at room temperature with {sup 16}O{sub 2}{sup +} and {sup 14}N{sub 2}{sup +} 30 keV ions in 1:1 ratio with fluences of 2.5x10{sup 17}, 5x10{sup 17}, 7.5x10{sup 17} and 1x10{sup 18} ions-cm{sup -2} to form silicon oxynitride layers. Rapid thermal annealing (RTA) of these samples was carried out at temperature of 623, 873 and 1173 K in nitrogen ambient for 5 min. Fourier transform infrared (FTIR), Micro-Raman and ellipsometry measurements were performed on RTA samples to investigate the structure and phase. The FTIR studies show that the structures of ion-beam synthesized oxynitride layers are strongly dependent on total ion-fluence and annealing temperature. The Micro-Raman studies on annealing revealed formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures for lower and higher ion fluences respectively with crystalline silicon beneath it. From the ellipsometry studies, the refractive index of the ion beam synthesized layers were found to be in 1.54-1.96 range.
- OSTI ID:
- 21137060
- Journal Information:
- AIP Conference Proceedings, Vol. 1004, Issue 1; Conference: NCTP'07: 4. national conference on thermophysical properties, Kollam, Kerala (India), 20-23 Sep 2007; Other Information: DOI: 10.1063/1.2927546; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs
Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study