Epitaxial nanotwinned Cu films with high strength and high conductivity

Journal Article · Mon Aug 25 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2969409· OSTI ID:21124098

Anderoglu, O; Zhang, X ^[1]; Misra, A; Ronning, F; Hundley, M F ^[2]; Wang, H ^[3]

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1. Department of Mechanical Engineering, Texas A and M University, College Station, Texas 77843-3123 (United States)
2. Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
3. Department of Electrical Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)

We report on the synthesis of epitaxial (single-crystal-like), nanotwinned Cu films via magnetron sputtering. Increasing the deposition rate from 1 to 4 nm/s decreased the average twin lamellae spacing from 16 to 7 nm. These epitaxial nanotwinned Cu films exhibit significantly higher ratio of hardness to room temperature electrical resistivity than columnar grain (nanocrystalline), textured, nanotwinned Cu films.

• OSTI ID: 21124098
• Journal Information: Applied Physics Letters, Vol. 93, Issue 8; Other Information: DOI: 10.1063/1.2969409; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER
DEPOSITION
ELECTRIC CONDUCTIVITY
EPITAXY
HARDNESS
LAMELLAE
LAYERS
MONOCRYSTALS
NANOSTRUCTURES
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS