High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Journal Article · Mon Aug 25 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2975959· OSTI ID:21124094

Lim, Wantae; Jang, Jung Hun; Kim, S -H; Norton, D P; Craciun, V; Pearton, S J ^[1]; Ren, F ^[2]; Shen, H ^[3]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. Sensors and Electron Devices Directorate, Army Research Laboratory, Adelphi, Maryland 20783 (United States)

High-performance amorphous ({alpha}-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In{sub 2}O{sub 3}) films. The InGaZnO films were deposited by rf magnetron sputtering with the presence of O{sub 2} at room temperature. The n-type carrier concentration of InGaZnO film was {approx}2x10{sup 17} cm{sup -3}. The bottom-gate-type TFTs with SiO{sub 2} or SiN{sub x} gate dielectric operated in enhancement mode with good electrical characteristics: saturation mobility 11.5 cm{sup 2} V{sup -1} s{sup -1} for SiO{sub 2} and 12.1 cm{sup 2} V{sup -1} s{sup -1} for SiN{sub x} gate dielectrics and drain current on-to-off ratio >10{sup 5}. TFTs with SiN{sub x} gate dielectric exhibited better performance than those with SiO{sub 2}. This is attributed to the relatively high dielectric constant (i.e., high-k material) of SiN{sub x}. After more than 500 h aging time at room temperature, the saturation mobility of the TFTs with SiO{sub 2} gate dielectric was comparable to the as-fabricated value and the threshold voltage shift was 150 mV.

• OSTI ID: 21124094
• Journal Information: Applied Physics Letters, Vol. 93, Issue 8; Other Information: DOI: 10.1063/1.2975959; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGING
AMORPHOUS STATE
CARRIER DENSITY
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
FIELD EFFECT TRANSISTORS
GALLIUM COMPOUNDS
INDIUM OXIDES
PERMITTIVITY
POLYESTERS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACE COATING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES