Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

Journal Article · Mon Jul 21 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2961016· OSTI ID:21123987

Asmussen, J ^[1]; Grotjohn, T A; Reinhard, D K ^[2]; Schuelke, T; Becker, M F; Yaran, M K; King, D J; Wicklein, S ^[1]

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1. Fraunhofer USA Inc., Center for Coatings and Laser Applications, Michigan State University, East Lansing, Michigan 48824-1226 (United States)
2. Michigan State University, East Lansing, Michigan 48824-1226 (United States)

A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of CH{sub 4}/H{sub 2}, microwave input powers of 10-11.5 kW, substrate temperatures of 1100-1200 deg. C, and pressures of 110-135 Torr. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14-21 {mu}m/h. Multiple deposition runs totaling 145 h of deposition time added 1.8-2.5 mm of diamond material to each of the 70 seed crystals.

• OSTI ID: 21123987
• Journal Information: Applied Physics Letters, Vol. 93, Issue 3; Other Information: DOI: 10.1063/1.2961016; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
EPITAXY
HYDROGEN
LAYERS
METHANE
MHZ RANGE 100-1000
MICROWAVE RADIATION
MONOCRYSTALS
PLASMA
SUBSTRATES
SYNTHESIS