Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system
- Veeco Instruments Inc., MBE Operations, 4900 Constellation Drive, St. Paul, Minnesota 55127 (United States)
In this work, the authors report step-flow growth mode of InN on [0001] oriented GaN templates, using a production-style molecular beam epitaxy system, Veeco GEN200 registered , equipped with a plasma source. Using adaptive growth conditions, they have obtained a surface morphology that exhibits the step-flow features. The root mean squared roughness over an area of 5x5 {mu}m{sup 2} is 1.4 nm with monolayer height terrace steps (0.281 nm), based on atomic force microscopy. It has been found that the presence of In droplets leads to defective surface morphology. From x-ray diffraction, they estimate edge and screw dislocation densities. The former is dominant over the latter. Micro-Raman spectra reveal narrow E{sub 2}{sup 2} phonon lines consistent with excellent crystalline quality of the epitaxial layers. The Hall mobility of 1 {mu}m thick InN layers, grown in step-flow mode, is slightly higher than 1400 cm{sup 2}/V s, while for other growth conditions yielding a smooth surface with no well-defined steps, mobility as high as 1904 cm{sup 2}/V s at room temperature has been measured. The samples exhibit high intensity photoluminescence (PL) with a corresponding band edge that shifts with free carrier concentration. For the lowest carrier concentration of 5.6x10{sup 17} cm{sup -3}, they observe PL emission at {approx}0.64 eV.
- OSTI ID:
- 21123905
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 26, Issue 3; Other Information: DOI: 10.1116/1.2899412; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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