Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
- LASMEA, UMR 6602 UBP/CNRS, 24 Avenue des Landais, F-63177 Aubiere Cedex (France)
- CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France)
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The {lambda}/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43{+-}2 meV and 56{+-}2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
- OSTI ID:
- 21120820
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 24; Other Information: DOI: 10.1063/1.2944263; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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