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Title: Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications

Abstract

We report the investigation of structure and magnetic properties of full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2{sub 1} ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications.

Authors:
; ; ; ;  [1]
  1. Magnetic Materials Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
Publication Date:
OSTI Identifier:
21120777
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 92; Journal Issue: 22; Other Information: DOI: 10.1063/1.2940595; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; ANNEALING; COBALT ALLOYS; FERROMAGNETIC MATERIALS; HEUSLER ALLOYS; IRON ALLOYS; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; MONOCRYSTALS; SILICON ALLOYS; SPUTTERING; SUBSTRATES; THIN FILMS; TUNNEL EFFECT

Citation Formats

Wenhong, Wang, Sukegawa, Hiroaki, Rong, Shan, Furubayashi, Takao, and Inomata, Koichiro. Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications. United States: N. p., 2008. Web. doi:10.1063/1.2940595.
Wenhong, Wang, Sukegawa, Hiroaki, Rong, Shan, Furubayashi, Takao, & Inomata, Koichiro. Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications. United States. https://doi.org/10.1063/1.2940595
Wenhong, Wang, Sukegawa, Hiroaki, Rong, Shan, Furubayashi, Takao, and Inomata, Koichiro. 2008. "Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications". United States. https://doi.org/10.1063/1.2940595.
@article{osti_21120777,
title = {Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications},
author = {Wenhong, Wang and Sukegawa, Hiroaki and Rong, Shan and Furubayashi, Takao and Inomata, Koichiro},
abstractNote = {We report the investigation of structure and magnetic properties of full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2{sub 1} ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications.},
doi = {10.1063/1.2940595},
url = {https://www.osti.gov/biblio/21120777}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 92,
place = {United States},
year = {Mon Jun 02 00:00:00 EDT 2008},
month = {Mon Jun 02 00:00:00 EDT 2008}
}