Absolute evaluation of out-of-band radiation from laser-produced tin plasmas for extreme ultraviolet lithography
- Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871 Japan (Japan)
- Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527 (Japan)
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 (Japan)
- Institute of Laser Technology, 2-6 Yamada-Oka, Suita, Osaka 565-0871 Japan (Japan)
Out-of-band (OOB) radiation (at wavelengths longer than 130 nm) from an extreme ultraviolet (EUV) light source reduces the precision of lithography. The energy of the OOB radiation from laser-produced Sn plasmas were measured by using an absolutely calibrated transmission grating spectrometer equipped with a charge-coupled device. The dependence of the OOB radiant energy on the mass and size of the tin fuel was clarified. The dominant source of the OOB radiation is peripheral heating around the laser spot via electron thermal conduction and radiation from the high-temperature EUV emission region.
- OSTI ID:
- 21120610
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 11; Other Information: DOI: 10.1063/1.2901875; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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