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Title: Indium induced band gap tailoring in AgGa{sub 1-x}In{sub x}S{sub 2} chalcopyrite structure for visible light photocatalysis

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/1.2900984· OSTI ID:21104031
; ;  [1];  [2];  [3]
  1. Eco-friendly Catalysis and Energy Laboratory (NRL), Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
  2. Beamline Research Division, Pohang Accelerator Laboratory, POSTECH, San 31, Hyojadong, Namgu, Pohang 790-784 (Korea, Republic of)
  3. Busan Center, Korea Basic Science Institute (KBSI), Busan 609-735 (Korea, Republic of)

Indium was substituted at gallium site in chalcopyrite AgGaS{sub 2} structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS{sub 2} lattice. The band gap energy of AgGa{sub 1-x}In{sub x}S{sub 2} (x=0-1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0) to 1.9 eV (x=1) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa{sub 1-x}In{sub x}S{sub 2} tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa{sub 1-x}In{sub x}S{sub 2}.

OSTI ID:
21104031
Journal Information:
Journal of Chemical Physics, Vol. 128, Issue 15; Other Information: DOI: 10.1063/1.2900984; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
Country of Publication:
United States
Language:
English