Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

Journal Article · Mon May 19 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2936307· OSTI ID:21102020

Anders, Andre ^[1]

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1. Lawrence Berkeley National Laboratory, University of California, 1 Cyclotron Road, Berkeley, California 94720 (United States)

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases {approx}Q{sup 1/2}, whereas the rate normalized to the average power decreases {approx}Q{sup -1/2}, with Q being the mean ion charge state number.

• OSTI ID: 21102020
• Journal Information: Applied Physics Letters, Vol. 92, Issue 20; Other Information: DOI: 10.1063/1.2936307; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE STATES
DEPOSITION
ELECTRON EMISSION
ELECTRONS
ENERGY BALANCE
IONS
MAGNETRONS
METALS
PULSES
SPUTTERING