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Title: Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron

Abstract

Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25-45 m{theta} cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [11-bar0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated.

Authors:
; ; ; ;  [1]
  1. Moscow State University (Russian Federation)
Publication Date:
OSTI Identifier:
21090882
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 52; Journal Issue: 4; Other Information: DOI: 10.1134/S1063774507040165; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BIREFRINGENCE; BORON; CRYSTALLOGRAPHY; DOPED MATERIALS; ELECTROCHEMISTRY; ETCHING; FILMS; NANOSTRUCTURES; POROUS MATERIALS; SILICON

Citation Formats

Piskunov, N. A., E-mail: leo@vega.phys.msu.ru, Zabotnov, S V, Mamichev, D A, Golovan', L A, Timoshenko, V Yu, and Kashkarov, P K. Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron. United States: N. p., 2007. Web. doi:10.1134/S1063774507040165.
Piskunov, N. A., E-mail: leo@vega.phys.msu.ru, Zabotnov, S V, Mamichev, D A, Golovan', L A, Timoshenko, V Yu, & Kashkarov, P K. Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron. United States. https://doi.org/10.1134/S1063774507040165
Piskunov, N. A., E-mail: leo@vega.phys.msu.ru, Zabotnov, S V, Mamichev, D A, Golovan', L A, Timoshenko, V Yu, and Kashkarov, P K. 2007. "Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron". United States. https://doi.org/10.1134/S1063774507040165.
@article{osti_21090882,
title = {Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron},
author = {Piskunov, N. A., E-mail: leo@vega.phys.msu.ru and Zabotnov, S V and Mamichev, D A and Golovan', L A and Timoshenko, V Yu and Kashkarov, P K},
abstractNote = {Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25-45 m{theta} cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [11-bar0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated.},
doi = {10.1134/S1063774507040165},
url = {https://www.osti.gov/biblio/21090882}, journal = {Crystallography Reports},
issn = {1063-7745},
number = 4,
volume = 52,
place = {United States},
year = {Sun Jul 15 00:00:00 EDT 2007},
month = {Sun Jul 15 00:00:00 EDT 2007}
}