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Title: Effect of the levels of intrinsic defects in the CdP{sub 2} band gap on electrical characteristics of corresponding structures with the Schottky barrier

Abstract

The electrical characteristics of Schottky barriers formed on n-type cadmium diphosphide are studied. It is established that the space-charge region at the metal-semiconductor interface represents in fact a Schottky layer formed owing to a high concentration of deep-level centers. The charge transport in the conducting direction for these structures is related to the above-barrier emission of electrons and is consistent with the diffusion theory for one or two types of charge carriers. The high concentration of ionized centers in the space-charge region gives rise to the tunneling mechanism of breakdown in the blocking direction. The frequency dependences of the complex conductance are governed by the exchange of charge carriers between the conduction band and donors that specify the conductivity type of the material and also by the recharing of the centers with a large depth of levels. Good agreement between the reported results and the theory is obtained.

Authors:
 [1]
  1. Dniester State University (Moldova, Republic of)
Publication Date:
OSTI Identifier:
21088648
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 40; Journal Issue: 10; Other Information: DOI: 10.1134/S1063782606100083; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM PHOSPHIDES; CHARGE CARRIERS; CHARGE TRANSPORT; ELECTRONS; EMISSION; FREQUENCY DEPENDENCE; INTERFACES; LAYERS; SCHOTTKY DEFECTS; SCHOTTKY EFFECT; SEMICONDUCTOR MATERIALS; SPACE CHARGE; TUNNEL EFFECT

Citation Formats

Stamov, I. G., E-mail: istamov51@mail.ru, and Tkachenko, D V. Effect of the levels of intrinsic defects in the CdP{sub 2} band gap on electrical characteristics of corresponding structures with the Schottky barrier. United States: N. p., 2006. Web. doi:10.1134/S1063782606100083.
Stamov, I. G., E-mail: istamov51@mail.ru, & Tkachenko, D V. Effect of the levels of intrinsic defects in the CdP{sub 2} band gap on electrical characteristics of corresponding structures with the Schottky barrier. United States. https://doi.org/10.1134/S1063782606100083
Stamov, I. G., E-mail: istamov51@mail.ru, and Tkachenko, D V. 2006. "Effect of the levels of intrinsic defects in the CdP{sub 2} band gap on electrical characteristics of corresponding structures with the Schottky barrier". United States. https://doi.org/10.1134/S1063782606100083.
@article{osti_21088648,
title = {Effect of the levels of intrinsic defects in the CdP{sub 2} band gap on electrical characteristics of corresponding structures with the Schottky barrier},
author = {Stamov, I. G., E-mail: istamov51@mail.ru and Tkachenko, D V},
abstractNote = {The electrical characteristics of Schottky barriers formed on n-type cadmium diphosphide are studied. It is established that the space-charge region at the metal-semiconductor interface represents in fact a Schottky layer formed owing to a high concentration of deep-level centers. The charge transport in the conducting direction for these structures is related to the above-barrier emission of electrons and is consistent with the diffusion theory for one or two types of charge carriers. The high concentration of ionized centers in the space-charge region gives rise to the tunneling mechanism of breakdown in the blocking direction. The frequency dependences of the complex conductance are governed by the exchange of charge carriers between the conduction band and donors that specify the conductivity type of the material and also by the recharing of the centers with a large depth of levels. Good agreement between the reported results and the theory is obtained.},
doi = {10.1134/S1063782606100083},
url = {https://www.osti.gov/biblio/21088648}, journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 40,
place = {United States},
year = {Sun Oct 15 00:00:00 EDT 2006},
month = {Sun Oct 15 00:00:00 EDT 2006}
}