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Title: Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation

Abstract

The results of studying the electrical properties of thin SnO{sub 2} films grown by reactive magnetron deposition are reported. The film crystallization under the exposure to intense incoherent pulsed radiation was studied using a UOL.P-1 commercial setup. It was shown that short pulsed annealing for fractions of second causes crystallization of the film and high gas sensitivity. It was found that the interaction of the polycrystalline film treated isothermally with gases is similar to that of films crystallized by pulsed annealing.

Authors:
 [1];  [2]; ;  [1]
  1. Voronezh State Technical University (Russian Federation)
  2. Voronezh State University (Russian Federation), E-mail: rembeza@phys.vsu.ru
Publication Date:
OSTI Identifier:
21088614
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 1; Other Information: DOI: 10.1134/S106378260601009X; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTALLIZATION; DEPOSITION; ELECTRICAL PROPERTIES; FILMS; INTERACTIONS; MAGNETRONS; POLYCRYSTALS; PULSED IRRADIATION; SENSITIVITY; TIN OXIDES

Citation Formats

Rembeza, S. I., Rembeza, E. S., Svistova, T. V., and Borsyakova, O. I. Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation. United States: N. p., 2006. Web. doi:10.1134/S106378260601009X.
Rembeza, S. I., Rembeza, E. S., Svistova, T. V., & Borsyakova, O. I. Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation. United States. doi:10.1134/S106378260601009X.
Rembeza, S. I., Rembeza, E. S., Svistova, T. V., and Borsyakova, O. I. Sun . "Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation". United States. doi:10.1134/S106378260601009X.
@article{osti_21088614,
title = {Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation},
author = {Rembeza, S. I. and Rembeza, E. S. and Svistova, T. V. and Borsyakova, O. I.},
abstractNote = {The results of studying the electrical properties of thin SnO{sub 2} films grown by reactive magnetron deposition are reported. The film crystallization under the exposure to intense incoherent pulsed radiation was studied using a UOL.P-1 commercial setup. It was shown that short pulsed annealing for fractions of second causes crystallization of the film and high gas sensitivity. It was found that the interaction of the polycrystalline film treated isothermally with gases is similar to that of films crystallized by pulsed annealing.},
doi = {10.1134/S106378260601009X},
journal = {Semiconductors},
number = 1,
volume = 40,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}
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