Photocurrent in self-organized InAs quantum dots in 1.3 {mu}m InAs/InGaAs/GaAs semiconductor laser heterostructures
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The photocurrent spectra of InAs/InGaAs/GaAs laser heterostructures with self-organized InAs quantum dots (QDs) are studied. The study has been performed with a sample illuminated perpendicularly or in parallel to the QD plane. The optical density of QDs, maximum gain in the laser structure, radiative recombination time, and polarization characteristics of absorption have been determined from the experiment. The photocurrent spectra were correlated with specific features of lasing. The absorption spectrum is interpreted as a superposition of optical transitions between states of the discrete energy spectrum, those between the states of the continuous spectrum, and 'mixed' transitions.
- OSTI ID:
- 21088608
- Journal Information:
- Semiconductors, Vol. 40, Issue 1; Other Information: DOI: 10.1134/S1063782606010155; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures
Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
Journal Article
·
Tue Apr 14 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:21088608
+4 more
Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:21088608
+3 more
Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
Journal Article
·
Sun Jun 07 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:21088608
+3 more