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Title: Hopping {epsilon}{sub 2} conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature

Abstract

It is shown that the high-temperature annealing in hydrogen flow results in substantial modification of the temperature dependence of the conductivity of boron-doped and undoped a-Si:H films. For doped films subjected to annealing, the {epsilon}{sub 2} conductivity related to hopping between localized states near the valence-band edge appears in the intermediate temperature range, along with the contributions of the band conductivity and the variable-range hopping conductivity. The {epsilon}{sub 2} conductivity becomes possible due to an increase in the concentration of electrically active boron atoms and to the appreciable shift of the Fermi level after high-temperature annealing of doped films in hydrogen atmosphere. The experimentally measured parameters of the {epsilon}{sub 2} conductivity make it possible to determine the width of the energy region, in which the density of localized states near the valence band falls off nonexponentially.

Authors:
; ; ;  [1]
  1. Moscow State University (Physics Department) (Russian Federation), E-mail: ormont@phys.msu.ru
Publication Date:
OSTI Identifier:
21088605
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782606010192; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BORON; DOPED MATERIALS; FERMI LEVEL; FILMS; HYDROGEN; SILICON; TEMPERATURE DEPENDENCE

Citation Formats

Zvyagin, I. P., Kurova, I. A., Nal'gieva, M. A., and Ormont, N. N. Hopping {epsilon}{sub 2} conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature. United States: N. p., 2006. Web. doi:10.1134/S1063782606010192.
Zvyagin, I. P., Kurova, I. A., Nal'gieva, M. A., & Ormont, N. N. Hopping {epsilon}{sub 2} conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature. United States. doi:10.1134/S1063782606010192.
Zvyagin, I. P., Kurova, I. A., Nal'gieva, M. A., and Ormont, N. N. Sun . "Hopping {epsilon}{sub 2} conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature". United States. doi:10.1134/S1063782606010192.
@article{osti_21088605,
title = {Hopping {epsilon}{sub 2} conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature},
author = {Zvyagin, I. P. and Kurova, I. A. and Nal'gieva, M. A. and Ormont, N. N.},
abstractNote = {It is shown that the high-temperature annealing in hydrogen flow results in substantial modification of the temperature dependence of the conductivity of boron-doped and undoped a-Si:H films. For doped films subjected to annealing, the {epsilon}{sub 2} conductivity related to hopping between localized states near the valence-band edge appears in the intermediate temperature range, along with the contributions of the band conductivity and the variable-range hopping conductivity. The {epsilon}{sub 2} conductivity becomes possible due to an increase in the concentration of electrically active boron atoms and to the appreciable shift of the Fermi level after high-temperature annealing of doped films in hydrogen atmosphere. The experimentally measured parameters of the {epsilon}{sub 2} conductivity make it possible to determine the width of the energy region, in which the density of localized states near the valence band falls off nonexponentially.},
doi = {10.1134/S1063782606010192},
journal = {Semiconductors},
number = 1,
volume = 40,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}