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Title: Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals

Abstract

The CdTe:Si single crystals with Si concentration in the range of C{sub Si}{sup 0}=2x10{sup 18}-5x10{sup 19} cm{sup -3} are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity {sigma}=2x10{sup -1}-8x10{sup -9} {omega}{sup -1} cm{sup -1}. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors as the samples are cut progressively closer to the ingot top. The results obtained indicate that the Si impurity, in contrast with Ge, Sn, and Pb, does not exhibit the compensating and stabilizing effect in CdTe.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Fed'kovich National University (Ukraine)
  2. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
21088600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782606020059; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CADMIUM TELLURIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; PHOTOLUMINESCENCE; SILICON; SPECTRA; STOCKBARGER METHOD; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., and Korbutyak, D. V.. Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals. United States: N. p., 2006. Web. doi:10.1134/S1063782606020059.
Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., & Korbutyak, D. V.. Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals. United States. doi:10.1134/S1063782606020059.
Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., and Korbutyak, D. V.. Wed . "Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals". United States. doi:10.1134/S1063782606020059.
@article{osti_21088600,
title = {Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals},
author = {Parfenyuk, O. A., E-mail: p_ebox@mail.ru and Ilashchuk, M. I. and Ulyanitskii, K. S. and Fochuk, P. M. and Strilchuk, O. M. and Krylyuk, S. G. and Korbutyak, D. V.},
abstractNote = {The CdTe:Si single crystals with Si concentration in the range of C{sub Si}{sup 0}=2x10{sup 18}-5x10{sup 19} cm{sup -3} are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity {sigma}=2x10{sup -1}-8x10{sup -9} {omega}{sup -1} cm{sup -1}. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors as the samples are cut progressively closer to the ingot top. The results obtained indicate that the Si impurity, in contrast with Ge, Sn, and Pb, does not exhibit the compensating and stabilizing effect in CdTe.},
doi = {10.1134/S1063782606020059},
journal = {Semiconductors},
number = 2,
volume = 40,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2006},
month = {Wed Feb 15 00:00:00 EST 2006}
}