skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals

Abstract

The CdTe:Si single crystals with Si concentration in the range of C{sub Si}{sup 0}=2x10{sup 18}-5x10{sup 19} cm{sup -3} are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity {sigma}=2x10{sup -1}-8x10{sup -9} {omega}{sup -1} cm{sup -1}. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors as the samples are cut progressively closer to the ingot top. The results obtained indicate that the Si impurity, in contrast with Ge, Sn, and Pb, does not exhibit the compensating and stabilizing effect in CdTe.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Fed'kovich National University (Ukraine)
  2. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
21088600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782606020059; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CADMIUM TELLURIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; PHOTOLUMINESCENCE; SILICON; SPECTRA; STOCKBARGER METHOD; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., and Korbutyak, D. V. Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals. United States: N. p., 2006. Web. doi:10.1134/S1063782606020059.
Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., & Korbutyak, D. V. Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals. United States. doi:10.1134/S1063782606020059.
Parfenyuk, O. A., E-mail: p_ebox@mail.ru, Ilashchuk, M. I., Ulyanitskii, K. S., Fochuk, P. M., Strilchuk, O. M., Krylyuk, S. G., and Korbutyak, D. V. Wed . "Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals". United States. doi:10.1134/S1063782606020059.
@article{osti_21088600,
title = {Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals},
author = {Parfenyuk, O. A., E-mail: p_ebox@mail.ru and Ilashchuk, M. I. and Ulyanitskii, K. S. and Fochuk, P. M. and Strilchuk, O. M. and Krylyuk, S. G. and Korbutyak, D. V.},
abstractNote = {The CdTe:Si single crystals with Si concentration in the range of C{sub Si}{sup 0}=2x10{sup 18}-5x10{sup 19} cm{sup -3} are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity {sigma}=2x10{sup -1}-8x10{sup -9} {omega}{sup -1} cm{sup -1}. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors as the samples are cut progressively closer to the ingot top. The results obtained indicate that the Si impurity, in contrast with Ge, Sn, and Pb, does not exhibit the compensating and stabilizing effect in CdTe.},
doi = {10.1134/S1063782606020059},
journal = {Semiconductors},
number = 2,
volume = 40,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2006},
month = {Wed Feb 15 00:00:00 EST 2006}
}
  • Comprehensive studies of the electrical properties of Mg-doped bulk GaN crystals, grown by high-pressure synthesis, were performed as a function of temperature up to 750{degree}C. Annealing of the samples in nitrogen ambient modifies qualitatively their resistivity values {rho} and the {rho}(T) variation. It was found that our material is characterized by a high concentration of oxygen-related donors and that the charge transport in the studied samples is determined by two types of states, one of shallow character (Mg-related state, E{sub A}{approximately}0.15eV), and the second one much more deep, E{sub 2}{approximately}0.95eV (above the valence band). Depending on the effective concentration ofmore » either states, different resistivities {rho} can be observed: lower resistivity ({rho}{lt}10{sup 4}{Omega}cm at ambient temperature) in samples with dominant E{sub A} states and very high resistivity ({rho}{gt}10{sup 6}{Omega}cm at ambient temperature) in samples with dominant E{sub 2} states. For the first type of samples, annealing at T{sub ann}{lt}500{degree}C leads to a decrease of their resistivity and is associated with an increase of the effective concentration of the shallow Mg acceptors. Annealing of both types of samples at temperatures between 600 and 750{degree}C leads to an increase of the deep state concentration. The presence of hydrogen ambient during annealing of the low-resistivity samples strongly influences their properties. The increase of the sample resistivity and an appearance of a local vibrational mode of hydrogen at 3125 cm{minus}1 were observed. These effects can be removed by annealing in hydrogen-free ambient. {copyright} 2001 American Institute of Physics.« less
  • The interaction of holes with phonons was studied in {ital p}-CdTe by means of Seebeck effect and {ital I}-{ital U} characteristics measurements without and with longitudinal temperature gradient. The both phenomena are evidently influenced by optical phonon drag effect. Optical phonon drag effect obviously diminishes thermopower values, in the second case the {ital I}-{ital U} characteristics shift was observed; in our arrangement temperature difference 10 K increases or decreases the current through the sample of about 40%. The explanation of this effects observed is based on Gurevich {ital et} {ital al}. theory about the charge redistribution in mediums with nonequilibriummore » carriers (of two types) and phonons in semiconductors. Our experimental results could have new promising applications. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.« less
  • The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76/sup 0/K have been studied in amphoterically Si-doped GaAs light-emitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, Phi, while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with Phi at constant voltage. This rapid decrease ismore » due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with Phi at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the ''wavy band'' model for these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated life-times; that is, the longest lifetimes are least affected by gamma irradiation.« less