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Title: On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface

Abstract

The coupling between levels related to silicon and carbon vacancies with metal states is considered in the surface molecule approximation. It is shown that the key role of silicon vacancies in the formation of a Schottky barrier at the Cr-SiC interface is due to the high density of states at the antibonding level.

Authors:
 [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: Sergei.Davydov@mail.ioffe.ru
  2. St. Petersburg State Electrotechnical University (LETI) (Russian Federation)
Publication Date:
OSTI Identifier:
21088582
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782606030080; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHROMIUM; INTERFACES; SCHOTTKY DEFECTS; SILICON; SILICON CARBIDES; SURFACES

Citation Formats

Davydov, S. Yu., and Posrednik, O. V. On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface. United States: N. p., 2006. Web. doi:10.1134/S1063782606030080.
Davydov, S. Yu., & Posrednik, O. V. On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface. United States. doi:10.1134/S1063782606030080.
Davydov, S. Yu., and Posrednik, O. V. Wed . "On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface". United States. doi:10.1134/S1063782606030080.
@article{osti_21088582,
title = {On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface},
author = {Davydov, S. Yu. and Posrednik, O. V.},
abstractNote = {The coupling between levels related to silicon and carbon vacancies with metal states is considered in the surface molecule approximation. It is shown that the key role of silicon vacancies in the formation of a Schottky barrier at the Cr-SiC interface is due to the high density of states at the antibonding level.},
doi = {10.1134/S1063782606030080},
journal = {Semiconductors},
number = 3,
volume = 40,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}
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