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Title: Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer

Abstract

The effect of the predeposition of strained Si{sub 1-x}Ge{sub x} layers (x {<=} 20%) on photoluminescence (PL) of self-assembled Ge(Si)/Si(001) islands is studied. A shift of the PL peak related to dome-shaped islands (domes) to lower energies, with respect to the PL peak related to pyramidal islands is observed; this shift is related to a much larger height of the domes compared to that of pyramids. It is found that, as the Ge content in the Si{sub 1-x}Ge{sub x} layer (x) becomes higher than 0.1, two separate peaks appear in the broad PL band related to the islands; these peaks are attributed to the zero-phonon and phonon-assisted optical transitions in the islands. The appearance of these transitions is caused by a change of the TO-phonon type involved in radiative recombination: a TO{sub Ge-Ge} phonon is replaced by a TO{sub Si-Ge} phonon with a shorter wavelength.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute for the Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
21088577
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782606030158; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM COMPOUNDS; LAYERS; PHOTOLUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; WAVELENGTHS

Citation Formats

Drozdov, Yu. N., Krasil'nik, Z. F., Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru, Novikov, A. V., Shaleev, M. V., and Yablonskii, A. N. Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer. United States: N. p., 2006. Web. doi:10.1134/S1063782606030158.
Drozdov, Yu. N., Krasil'nik, Z. F., Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru, Novikov, A. V., Shaleev, M. V., & Yablonskii, A. N. Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer. United States. doi:10.1134/S1063782606030158.
Drozdov, Yu. N., Krasil'nik, Z. F., Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru, Novikov, A. V., Shaleev, M. V., and Yablonskii, A. N. Wed . "Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer". United States. doi:10.1134/S1063782606030158.
@article{osti_21088577,
title = {Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer},
author = {Drozdov, Yu. N. and Krasil'nik, Z. F. and Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru and Novikov, A. V. and Shaleev, M. V. and Yablonskii, A. N.},
abstractNote = {The effect of the predeposition of strained Si{sub 1-x}Ge{sub x} layers (x {<=} 20%) on photoluminescence (PL) of self-assembled Ge(Si)/Si(001) islands is studied. A shift of the PL peak related to dome-shaped islands (domes) to lower energies, with respect to the PL peak related to pyramidal islands is observed; this shift is related to a much larger height of the domes compared to that of pyramids. It is found that, as the Ge content in the Si{sub 1-x}Ge{sub x} layer (x) becomes higher than 0.1, two separate peaks appear in the broad PL band related to the islands; these peaks are attributed to the zero-phonon and phonon-assisted optical transitions in the islands. The appearance of these transitions is caused by a change of the TO-phonon type involved in radiative recombination: a TO{sub Ge-Ge} phonon is replaced by a TO{sub Si-Ge} phonon with a shorter wavelength.},
doi = {10.1134/S1063782606030158},
journal = {Semiconductors},
number = 3,
volume = 40,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}