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Title: InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8 {mu}m

Abstract

Heterostructures with InGaNAs quantum wells (QWs) that contain InAs monolayer insertions and are confined between InGaNAs/GaNAs superlattices, grown on GaAs substrates by molecular-beam epitaxy, have been studied. At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain. The longest emission wavelength achieved at room temperature was 1.59 {mu}m in structures with QWs and 1.76 {mu}m in those with quantum dots (QDs)

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088576
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 3; Other Information: DOI: 10.1134/S106378260603016X; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; QUANTUM DOTS; QUANTUM WELLS; STRAINS; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Mikhrin, V. S., E-mail: mikhrin@yahoo.com, Vasil'ev, A. P., Semenova, E. S., Kryzhanovskaya, N. V., Gladyshev, A. G., Musikhin, Yu. G., Egorov, A. Yu., Zhukov, A. E., and Ustinov, V. M. InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8 {mu}m. United States: N. p., 2006. Web. doi:10.1134/S106378260603016X.
Mikhrin, V. S., E-mail: mikhrin@yahoo.com, Vasil'ev, A. P., Semenova, E. S., Kryzhanovskaya, N. V., Gladyshev, A. G., Musikhin, Yu. G., Egorov, A. Yu., Zhukov, A. E., & Ustinov, V. M. InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8 {mu}m. United States. doi:10.1134/S106378260603016X.
Mikhrin, V. S., E-mail: mikhrin@yahoo.com, Vasil'ev, A. P., Semenova, E. S., Kryzhanovskaya, N. V., Gladyshev, A. G., Musikhin, Yu. G., Egorov, A. Yu., Zhukov, A. E., and Ustinov, V. M. Wed . "InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8 {mu}m". United States. doi:10.1134/S106378260603016X.
@article{osti_21088576,
title = {InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8 {mu}m},
author = {Mikhrin, V. S., E-mail: mikhrin@yahoo.com and Vasil'ev, A. P. and Semenova, E. S. and Kryzhanovskaya, N. V. and Gladyshev, A. G. and Musikhin, Yu. G. and Egorov, A. Yu. and Zhukov, A. E. and Ustinov, V. M.},
abstractNote = {Heterostructures with InGaNAs quantum wells (QWs) that contain InAs monolayer insertions and are confined between InGaNAs/GaNAs superlattices, grown on GaAs substrates by molecular-beam epitaxy, have been studied. At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain. The longest emission wavelength achieved at room temperature was 1.59 {mu}m in structures with QWs and 1.76 {mu}m in those with quantum dots (QDs)},
doi = {10.1134/S106378260603016X},
journal = {Semiconductors},
number = 3,
volume = 40,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}